NTD6600N-001

ON Semiconductor

Manufacturer: ON Semiconductor, Series: -, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V, FET Feature: -, Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc), Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: I-Pak, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA