NTB52N10G

ON Semiconductor

Manufacturer: ON Semiconductor, Series: -, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V, FET Feature: -, Power Dissipation (Max): 2W (Ta), 178W (Tc), Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D2PAK, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB