FQN1N50CBU

ON Semiconductor

Manufacturer: ON Semiconductor, Series: QFET®, Packaging: Bulk, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 380mA (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V, FET Feature: -, Power Dissipation (Max): 890mW (Ta), 2.08W (Tc), Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-92-3, Package / Case: TO-226-3, TO-92-3 (TO-226AA)