HAT2174H-EL-E

Renesas Electronics America

Manufacturer: Renesas Electronics America, Series: -, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs(th) (Max) @ Id: -, Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 10V, FET Feature: -, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: LFPAK, Package / Case: SC-100, SOT-669