SPI21N10

Infineon Technologies

Manufacturer: Infineon Technologies, Series: SIPMOS®, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 44µA, Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V, FET Feature: -, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO262-3-1, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA