IPI100N06S3-04

Infineon Technologies

Manufacturer: Infineon Technologies, Series: OptiMOS™, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 150µA, Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V, FET Feature: -, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO262-3, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA