PSMN165-200K,518

Nexperia USA Inc.

Manufacturer: Nexperia USA Inc., Series: TrenchMOS™, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 25V, FET Feature: -, Power Dissipation (Max): 3.5W (Tc), Rds On (Max) @ Id, Vgs: 165 mOhm @ 2.5A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width)