SPD04N50C3T

Infineon Technologies

Manufacturer: Infineon Technologies, Series: CoolMOS™, Packaging: Cut Tape (CT), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 560V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 3.9V @ 200µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, FET Feature: -, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PG-TO252-3, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63