BSP317PE6327T

Infineon Technologies

Manufacturer: Infineon Technologies, Series: SIPMOS®, Packaging: Cut Tape (CT), Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 250V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2V @ 370µA, Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V, FET Feature: -, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PG-SOT223-4, Package / Case: TO-261-4, TO-261AA