BSP129E6327T

Infineon Technologies

Manufacturer: Infineon Technologies, Series: SIPMOS®, Packaging: Cut Tape (CT), Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 240V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs(th) (Max) @ Id: 1V @ 108µA, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PG-SOT223-4, Package / Case: TO-261-4, TO-261AA