ISL9N302AS3

ON Semiconductor

Manufacturer: ON Semiconductor, Series: UltraFET™, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 15V, FET Feature: -, Power Dissipation (Max): 345W (Tc), Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V, Operating Temperature: -, Mounting Type: Through Hole, Supplier Device Package: I2PAK (TO-262), Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA