FQI50N06LTU

ON Semiconductor

Manufacturer: ON Semiconductor, Series: QFET®, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V, FET Feature: -, Power Dissipation (Max): 3.75W (Ta), 121W (Tc), Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: I2PAK (TO-262), Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA