HUF75307T3ST

ON Semiconductor

Manufacturer: ON Semiconductor, Series: -, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 20V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V, FET Feature: -, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: SOT-223-4, Package / Case: TO-261-4, TO-261AA