IXTC200N10T

IXYS

Manufacturer: IXYS, Series: TrenchMV™, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 101A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V, FET Feature: -, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: ISOPLUS220™, Package / Case: ISOPLUS220™