SCT3030ALGC11

Rohm Semiconductor

Manufacturer: Rohm Semiconductor, Series: -, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V, Vgs (Max): +22V, -4V, Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V, FET Feature: -, Power Dissipation (Max): 262W (Tc), Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V, Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-247N, Package / Case: TO-247-3