APT5SM170S

Microsemi Corporation

Manufacturer: Microsemi Corporation, Series: -, Packaging: Bulk, Part Status: Obsolete, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Drain to Source Voltage (Vdss): 1700V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs(th) (Max) @ Id: 3.2V @ 500µA, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 20V, Vgs (Max): +25V, -10V, Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 1000V, FET Feature: -, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 20V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D3Pak, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA