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Техническая спецификация
Производитель
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Infineon Technologies
Техническая спецификация
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Manufacturer: Infineon Technologies,
Series: CoolMOS™,
Packaging: Tube,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 800V,
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc),
Drive Voltage (Max Rds On, Min Rds On): 10V,
Vgs(th) (Max) @ Id: 3.9V @ 120µA,
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V,
FET Feature: -,
Power Dissipation (Max): 42W (Tc),
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.1A, 10V,
Operating Temperature: -55°C ~ 150°C (TJ),
Mounting Type: Through Hole,
Supplier Device Package: PG-TO251-3,
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Описание IPU80R2K8CEBKMA1
MOSFET N-CH 800V 1.9A TO251-3 - N-Channel 800V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3
Транзисторы полевые IPU80R2K8CEBKMA1
Наличие
Техническая спецификация
Infineon Technologies |
Manufacturer: Infineon Technologies, Series: CoolMOS™, Packaging: Tube, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 3.9V @ 120µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 100V, FET Feature: -, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.1A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO251-3, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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