APT28F60S

Microsemi Corporation

Manufacturer: Microsemi Corporation, Series: POWER MOS 8™, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 5575pF @ 25V, FET Feature: -, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 220 mOhm @ 14A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D3Pak, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA