IPP10N03LB G

Infineon Technologies

Manufacturer: Infineon Technologies, Series: OptiMOS™, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V, FET Feature: -, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 50A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO220-3-1, Package / Case: TO-220-3