BSP149L6906HTSA1

Infineon Technologies

Manufacturer: Infineon Technologies, Series: SIPMOS®, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 660mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs(th) (Max) @ Id: 1V @ 400µA, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PG-SOT223-4, Package / Case: TO-261-4, TO-261AA