Под заказ 3-4 недели
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Доставка 3-4 недели после оплаты
Доставка 3-4 недели после оплаты
Техническая спецификация
Производитель
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Toshiba Semiconductor and Storage
Техническая спецификация
—
Manufacturer: Toshiba Semiconductor and Storage,
Series: -,
Packaging: Digi-Reel®,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 60V,
Current - Continuous Drain (Id) @ 25°C: 5A (Ta),
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V,
Vgs(th) (Max) @ Id: 2V @ 1mA,
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V,
FET Feature: -,
Power Dissipation (Max): 20W (Tc),
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V,
Operating Temperature: 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: PW-MOLD,
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Описание 2SK2231(TE16R1,NQ)
MOSFET N-CH 60V 5A PW-MOLD - N-Channel 60V 5A (Ta) 20W (Tc) Surface Mount PW-MOLD
Транзисторы полевые 2SK2231(TE16R1,NQ)
Наличие
Техническая спецификация
Toshiba Semiconductor and Storage |
Manufacturer: Toshiba Semiconductor and Storage, Series: -, Packaging: Digi-Reel®, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V, FET Feature: -, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PW-MOLD, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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