PSMN003-30P,127

Nexperia USA Inc.

Manufacturer: Nexperia USA Inc., Series: TrenchMOS™, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V, FET Feature: -, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-220AB, Package / Case: TO-220-3