2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: -, Packaging: Digi-Reel®, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V, FET Feature: -, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PW-MINI, Package / Case: TO-243AA