FQI19N20CTU

ON Semiconductor

Manufacturer: ON Semiconductor, Series: QFET®, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V, FET Feature: -, Power Dissipation (Max): 3.13W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.5A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: I2PAK (TO-262), Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA