FQB19N10TM

ON Semiconductor

Manufacturer: ON Semiconductor, Series: QFET®, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs (Max): ±25V, Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V, FET Feature: -, Power Dissipation (Max): 3.75W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D²PAK (TO-263AB), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB