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Доставка 3-4 недели после оплаты
Доставка 3-4 недели после оплаты
Техническая спецификация
Производитель
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Toshiba Semiconductor and Storage
Техническая спецификация
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Manufacturer: Toshiba Semiconductor and Storage,
Series: DTMOSIV,
Packaging: Digi-Reel®,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 600V,
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta),
Drive Voltage (Max Rds On, Min Rds On): 10V,
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA,
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V,
Vgs (Max): ±30V,
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V,
FET Feature: Super Junction,
Power Dissipation (Max): 240W (Tc),
Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V,
Operating Temperature: 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: 5-DFN (8x8),
Package / Case: 4-VSFN Exposed Pad
Описание TK31V60W,LVQ
MOSFET N CH 600V 30.8A 5DFN - N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 5-DFN (8x8)
Транзисторы полевые TK31V60W,LVQ
Наличие
Техническая спецификация
Toshiba Semiconductor and Storage |
Manufacturer: Toshiba Semiconductor and Storage, Series: DTMOSIV, Packaging: Digi-Reel®, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V, FET Feature: Super Junction, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 98 mOhm @ 15.4A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 5-DFN (8x8), Package / Case: 4-VSFN Exposed Pad |
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