SIHB12N50C-E3

Vishay Siliconix

Manufacturer: Vishay Siliconix, Series: -, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V, FET Feature: -, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D²PAK (TO-263), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB