TK8A10K3,S5Q

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSIV, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, FET Feature: -, Power Dissipation (Max): 18W (Tc), Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-220SIS, Package / Case: TO-220-3 Full Pack