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Техническая спецификация
Производитель
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Infineon Technologies
Техническая спецификация
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Manufacturer: Infineon Technologies,
Series: SIPMOS®,
Packaging: Tube,
Part Status: Not For New Designs,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 100V,
Current - Continuous Drain (Id) @ 25°C: 47A (Tc),
Drive Voltage (Max Rds On, Min Rds On): 10V,
Vgs(th) (Max) @ Id: 4V @ 2mA,
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V,
FET Feature: -,
Power Dissipation (Max): 175W (Tc),
Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V,
Operating Temperature: -55°C ~ 175°C (TJ),
Mounting Type: Through Hole,
Supplier Device Package: PG-TO262-3,
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Описание IPI47N10S33AKSA1
MOSFET N-CH 100V 47A TO262-3 - N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO262-3
Транзисторы полевые IPI47N10S33AKSA1
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Техническая спецификация
Infineon Technologies |
Manufacturer: Infineon Technologies, Series: SIPMOS®, Packaging: Tube, Part Status: Not For New Designs, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 2mA, Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V, FET Feature: -, Power Dissipation (Max): 175W (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: PG-TO262-3, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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