IPB35N10S3L26ATMA1

Infineon Technologies

Manufacturer: Infineon Technologies, Series: Automotive, AEC-Q101, OptiMOS™, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.4V @ 39µA, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V, FET Feature: -, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 26.3 mOhm @ 35A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PG-TO263-3-2, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB