Под заказ 3-4 недели
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Доставка 3-4 недели после оплаты
Доставка 3-4 недели после оплаты
Техническая спецификация
Производитель
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Toshiba Semiconductor and Storage
Техническая спецификация
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Manufacturer: Toshiba Semiconductor and Storage,
Series: U-MOSVIII-H,
Packaging: Digi-Reel®,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 80V,
Current - Continuous Drain (Id) @ 25°C: 24A (Tc),
Drive Voltage (Max Rds On, Min Rds On): 10V,
Vgs(th) (Max) @ Id: 4V @ 300µA,
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 40V,
FET Feature: -,
Power Dissipation (Max): 1.6W (Ta), 48W (Tc),
Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12A, 10V,
Operating Temperature: 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: 8-SOP Advance (5x5),
Package / Case: 8-PowerVDFN
Описание TPH12008NH,L1Q
MOSFET N CH 80V 24A SOP - N-Channel 80V 24A (Tc) 1.6W (Ta), 48W (Tc) Surface Mount 8-SOP Advance (5x5)
Транзисторы полевые TPH12008NH,L1Q
Наличие
Техническая спецификация
Toshiba Semiconductor and Storage |
Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVIII-H, Packaging: Digi-Reel®, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 300µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 40V, FET Feature: -, Power Dissipation (Max): 1.6W (Ta), 48W (Tc), Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SOP Advance (5x5), Package / Case: 8-PowerVDFN |
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