TPH6R004PL,LQ

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSIX-H, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 49A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.4V @ 200µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 20V, FET Feature: -, Power Dissipation (Max): 1.8W (Ta), 81W (Tc), Rds On (Max) @ Id, Vgs: 6 mOhm @ 24.5A, 10V, Operating Temperature: 175°C, Mounting Type: Surface Mount, Supplier Device Package: 8-SOP Advance (5x5), Package / Case: 8-PowerVDFN