TPC6113(TE85L,F,M)

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVI, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 200µA, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V, FET Feature: -, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: VS-6 (2.9x2.8), Package / Case: SOT-23-6 Thin, TSOT-23-6