Под заказ 3-4 недели
Покупка в 1 клик
Безналичный перевод на р/с
Доставка 3-4 недели после оплаты
Доставка 3-4 недели после оплаты
Техническая спецификация
Производитель
—
Vishay Siliconix
Техническая спецификация
—
Manufacturer: Vishay Siliconix,
Series: TrenchFET®,
Packaging: Digi-Reel®,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 30V,
Current - Continuous Drain (Id) @ 25°C: 6A (Tc),
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V,
Vgs(th) (Max) @ Id: 3V @ 250µA,
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V,
FET Feature: -,
Power Dissipation (Max): 3.5W (Ta), 10.4W (Tc),
Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.1A, 10V,
Operating Temperature: -55°C ~ 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9),
Package / Case: 8-PowerVDFN
Описание SI5458DU-T1-GE3
MOSFET N-CH 30V 6A PPAK CHIPFET - N-Channel 30V 6A (Tc) 3.5W (Ta), 10.4W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9)
Транзисторы полевые SI5458DU-T1-GE3
Наличие
Техническая спецификация
Vishay Siliconix |
Manufacturer: Vishay Siliconix, Series: TrenchFET®, Packaging: Digi-Reel®, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, FET Feature: -, Power Dissipation (Max): 3.5W (Ta), 10.4W (Tc), Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.1A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-PowerPak® ChipFet (3x1.9), Package / Case: 8-PowerVDFN |
Отзывы
Оставить отзыв
Загрузка отзывов...
Похожие товары
К сожалению, раздел пуст
В данный момент нет активных товаров
В данный момент нет активных товаров