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Техническая спецификация
Производитель
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Infineon Technologies
Техническая спецификация
—
Manufacturer: Infineon Technologies,
Series: HEXFET®,
Packaging: Digi-Reel®,
Part Status: Discontinued at Digi-Key,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 30V,
Current - Continuous Drain (Id) @ 25°C: 10A (Ta),
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V,
Vgs(th) (Max) @ Id: 2.35V @ 25µA,
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V,
Vgs (Max): ±20V,
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V,
FET Feature: -,
Power Dissipation (Max): 2.6W (Ta), 20W (Tc),
Rds On (Max) @ Id, Vgs: 16 mOhm @ 17A, 10V,
Operating Temperature: -55°C ~ 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: 8-PQFN (3.3x3.3), Power33,
Package / Case: 8-PowerTDFN
Описание IRFHM8342TRPBF
MOSFET N-CH 30V 10A 8PQFN - N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
Транзисторы полевые IRFHM8342TRPBF
Наличие
Техническая спецификация
Infineon Technologies |
Manufacturer: Infineon Technologies, Series: HEXFET®, Packaging: Digi-Reel®, Part Status: Discontinued at Digi-Key, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V, FET Feature: -, Power Dissipation (Max): 2.6W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 16 mOhm @ 17A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Package / Case: 8-PowerTDFN |
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