SSM6K341NU,LF

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVIII-H, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, FET Feature: -, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 36 mOhm @ 4A, 10V, Operating Temperature: 150°C, Mounting Type: Surface Mount, Supplier Device Package: 6-UDFNB (2x2), Package / Case: 6-WDFN Exposed Pad