SSM6K217FE,LF

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVII-H, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V, FET Feature: -, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 195 mOhm @ 1A, 8V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: ES6, Package / Case: SOT-563, SOT-666