RJK60S7DPK-M0#T0

Renesas Electronics America

Manufacturer: Renesas Electronics America, Series: -, Packaging: Tube, Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: -, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V, Vgs (Max): +30V, -20V, Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V, FET Feature: Super Junction, Power Dissipation (Max): 227.2W (Tc), Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-3PSG, Package / Case: TO-3PSG