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Техническая спецификация
Производитель
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ON Semiconductor
Техническая спецификация
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Manufacturer: ON Semiconductor,
Series: QFET®,
Packaging: Cut Tape (CT),
Part Status: Active,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 500V,
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc),
Drive Voltage (Max Rds On, Min Rds On): 10V,
Vgs(th) (Max) @ Id: 3.7V @ 250µA,
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V,
Vgs (Max): ±30V,
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V,
FET Feature: -,
Power Dissipation (Max): 1.5W (Tc),
Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V,
Operating Temperature: -55°C ~ 150°C (TJ),
Mounting Type: Through Hole,
Supplier Device Package: TO-92-3,
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Описание FQNL2N50BTA
MOSFET N-CH 500V 0.35A TO-92-3 - N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
Транзисторы полевые FQNL2N50BTA
Наличие
Техническая спецификация
ON Semiconductor |
Manufacturer: ON Semiconductor, Series: QFET®, Packaging: Cut Tape (CT), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V, FET Feature: -, Power Dissipation (Max): 1.5W (Tc), Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-92-3, Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) |
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