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Техническая спецификация
Производитель
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Diodes Incorporated
Техническая спецификация
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Manufacturer: Diodes Incorporated,
Series: Automotive, AEC-Q101,
Packaging: Digi-Reel®,
Part Status: Active,
FET Type: N-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 24V,
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta),
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V,
Vgs(th) (Max) @ Id: 1.45V @ 250µA,
Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V,
Vgs (Max): ±12V,
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V,
FET Feature: -,
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc),
Rds On (Max) @ Id, Vgs: 6 mOhm @ 9A, 10V,
Operating Temperature: -55°C ~ 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: U-DFN2020-6 (Type F),
Package / Case: 6-UDFN Exposed Pad
Описание DMT2004UFDF-7
MOSFET BVDSS: 8V 24V,U-DFN2020-6 - N-Channel 24V 14.1A (Ta) 800mW (Ta), 12.5W (Tc) Surface Mount U-DFN2020-6 (Type F)
Транзисторы полевые DMT2004UFDF-7
Наличие
Техническая спецификация
Diodes Incorporated |
Manufacturer: Diodes Incorporated, Series: Automotive, AEC-Q101, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs(th) (Max) @ Id: 1.45V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V, FET Feature: -, Power Dissipation (Max): 800mW (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 6 mOhm @ 9A, 10V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: U-DFN2020-6 (Type F), Package / Case: 6-UDFN Exposed Pad |
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