SSM3J304T(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSIII, Packaging: Digi-Reel®, Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs(th) (Max) @ Id: -, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4V, Vgs (Max): ±8V, Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V, FET Feature: -, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 127 mOhm @ 1A, 4V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: TSM, Package / Case: TO-236-3, SC-59, SOT-23-3