PSMN1R5-40ES,127

Nexperia USA Inc.

Manufacturer: Nexperia USA Inc., Series: -, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 20V, FET Feature: -, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Supplier Device Package: I2PAK, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA