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Техническая спецификация
Производитель
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Toshiba Semiconductor and Storage
Техническая спецификация
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Manufacturer: Toshiba Semiconductor and Storage,
Series: U-MOSVII,
Packaging: Digi-Reel®,
Part Status: Active,
FET Type: P-Channel,
Technology: MOSFET (Metal Oxide),
Drain to Source Voltage (Vdss): 20V,
Current - Continuous Drain (Id) @ 25°C: 6A (Ta),
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V,
Vgs(th) (Max) @ Id: 1V @ 1mA,
Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 8V,
Vgs (Max): ±10V,
Input Capacitance (Ciss) (Max) @ Vds: 1331pF @ 10V,
FET Feature: -,
Power Dissipation (Max): 1W (Ta),
Rds On (Max) @ Id, Vgs: 22.1 mOhm @ 6A, 8V,
Operating Temperature: 150°C (TJ),
Mounting Type: Surface Mount,
Supplier Device Package: SOT-23F,
Package / Case: SOT-23-3 Flat Leads
Описание SSM3J358R,LF
SMALL LOW ON RESISTANCE MOSFET - P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
Транзисторы полевые SSM3J358R,LF
Наличие
Техническая спецификация
Toshiba Semiconductor and Storage |
Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVII, Packaging: Digi-Reel®, Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs(th) (Max) @ Id: 1V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 38.5nC @ 8V, Vgs (Max): ±10V, Input Capacitance (Ciss) (Max) @ Vds: 1331pF @ 10V, FET Feature: -, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 22.1 mOhm @ 6A, 8V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: SOT-23F, Package / Case: SOT-23-3 Flat Leads |
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