TPH7R506NH,L1Q

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVIII-H, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 300µA, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V, FET Feature: -, Power Dissipation (Max): 1.6W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 8-SOP Advance (5x5), Package / Case: 8-PowerVDFN