STW56N65M2-4

STMicroelectronics

Manufacturer: STMicroelectronics, Series: MDmesh™ M2, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V, Vgs (Max): ±25V, Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V, FET Feature: -, Power Dissipation (Max): 358W (Tc), Rds On (Max) @ Id, Vgs: 62 mOhm @ 24.5A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: TO-247-4L, Package / Case: TO-247-4