TK50P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSVI-H, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.3V @ 500µA, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V, FET Feature: -, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: DP, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63