SSM3K35AMFV,L3F

Toshiba Semiconductor and Storage

Manufacturer: Toshiba Semiconductor and Storage, Series: U-MOSIII, Packaging: Digi-Reel®, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs(th) (Max) @ Id: 1V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, Vgs (Max): ±10V, Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, FET Feature: -, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: VESM, Package / Case: SOT-723